Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure apparatus and exposure method, device manufacturing method

ABSTRACT

A lithographic projection apparatus includes a substrate table configured to hold a substrate, a projection system arranged to project a patterned beam of radiation onto the substrate, a liquid supply system configured to supply liquid to a space between the projection system and the substrate, and a residual liquid detector configured to detect liquid remaining on the substrate and/or the substrate table after an exposure is completed. A device manufacturing method includes projecting, using a projection system of a lithographic apparatus, a patterned beam of radiation through a liquid onto a substrate, the substrate being held by a substrate table, and, after the projecting is complete, detecting residual liquid on the substrate and/or the substrate table.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a Continuation of U.S. patent application Ser. No. 11/652,015filed Jan. 11, 2007, which is a Divisional of U.S. patent applicationSer. No. 11/398,572 filed Apr. 6, 2006, which is a Continuation ofInternational Application No. PCT/JP2004/014855 filed Oct. 7, 2004,which claims priority to 2003-349550. The contents of each of theaforementioned applications are incorporated herein by reference intheir entireties.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a substrate conveyance device and asubstrate conveyance method that conveys a substrate exposed by a liquidimmersion method, to an exposure apparatus and an exposure method, andto a device manufacturing method.

The present application claims priority to Japanese Patent ApplicationNo. 2003-349550, filed on Oct. 8, 2003, and the content thereof isincorporated herein by reference.

2. Description of Related Art

Semiconductor devices and liquid crystal display devices aremanufactured through the so-called photolithography technique, by whicha pattern formed on a mask is transferred onto a photosensitivesubstrate. The exposure apparatus used in the photolithography processhas a mask stage that supports a mask and a substrate stage thatsupports a substrate, and while successively moving the mask stage andthe substrate stage, transfers the mask pattern, via a projectionoptical system, onto the substrate. In recent years, to address theincreasingly high integration of device patterns, increasingly highresolution of the projection optical system has been desired. Theshorter the exposure wavelength used is, and, also, the larger thenumerical aperture of the projection optical system is, the higher theresolution of the projection optical system becomes. For this reason,the exposure wavelength used for the exposure apparatus is becomingshorter and shorter year by year, and the numerical aperture of theprojection optical system is also becoming larger and larger. In thiscontext, the presently dominant exposure wavelength is 248 nm from a KrFexcimer laser, but a still shorter wavelength of 193 nm from an ArFexcimer laser is now gradually being put to practical use. In addition,when performing exposure, the depth of focus (DOF) is an importantfactor as well as the resolution. The resolution R and the depth offocus δ are respectively expressed by the following formulas:

R=k ₁·λ/NA,  (1)

δ=±k _(z)*λ/NA²,  (2)

where λ is the exposure wavelength, NA is the numerical aperture of theprojection optical system, and k₁ and k₂ are process coefficients. Itcan be seen from formulas (1) and (2) that if, to enhance the resolutionR, the wavelength λ is made shorter and the numerical aperture is madelarger, then the depth of focus δ becomes narrower.

When the depth of focus δ becomes too narrow, it becomes difficult tomake the substrate surface coincide with the image plane of theprojection optical system, and thus there occurs the possibility thatthe focus margin during the exposure operation will be insufficient. Toaddress this problem, the liquid immersion method, which is disclosedin, e.g., PCT International Publication WO 99/49504 mentioned below, hasbeen proposed as a method to make the exposure wavelength shorter ineffect and to make the depth of focus broader. This liquid immersionmethod is designed to, by filling the space between the under surface ofthe projection optical system and the substrate surface with a liquid,e.g., water or organic solvent and thus by taking advantage of the factthat the wavelength of the exposure light in the liquid becomes 1/ntimes (n is the refractive index of the liquid and is generally about1.2 to 1.6) of that in the air, improve the resolution and, at the sametime, enlarge the depth of focus by approximately n times.

By the way, when a liquid remains on a substrate having been liquidimmersion exposed, various disadvantages may arise. For example, when asubstrate on which a liquid still adheres is subjected to a developmentprocess, development irregularity is induced; or an adhesion trace (theso-called water mark) that remains on the substrate after the remainingliquid has vaporized induces a development irregularity. As justdescribed, when the liquid remaining on a substrate having been liquidimmersion exposed is left as it is, a device defect is induced; however,such a defect is found as a form of a defective product only aftercompleting a final device, which may cause decrease of deviceproductivity.

The present invention has been made in consideration of such situations,and it is directed to a substrate conveyance device and a substrateconveyance method, an exposure apparatus and an exposure method, and adevice manufacturing method that are capable of preventing the defectivedevice due to a liquid remaining on a substrate having been liquidimmersion exposed.

DISCLOSURE OF INVENTION

To solve the above-described problems, the present invention adopts thefollowing configurations that are illustrated in the embodiments andcorrespond to FIGS. 1-10.

A substrate conveyance device of the present invention is a substrateconveyance device that conveys a substrate having been exposed with apattern image via a projection optical system and a liquid, thesubstrate conveyance device comprising: a liquid detector that detectsthe liquid adhering on the substrate.

Further, a substrate conveyance method of the present invention is asubstrate conveyance method in which a substrate having been exposedwith a pattern image via a projection optical system and a liquid isconveyed, the substrate conveyance method comprising: detecting theliquid adhering on the substrate on the conveyance path of thesubstrate.

According to the present invention, the liquid adhering on the substratecan be detected when the substrate experienced the liquid immersionexposure is conveyed. Further, based on the detection results, in thecase, for example, where the liquid is adhering on the substrate, thesubstrate can be, after removing the liquid therefrom, sent to apost-exposure process, e.g., a development process. Thus, a devicehaving a desired performance can be produced without being affected bythe liquid in the post-exposure process. Further, when it is detectedthat the liquid is not adhering on the substrate, the liquid removalprocess can be omitted, which improves the operation efficiency. Inaddition, by executing again the liquid detection process on thesubstrate after the liquid removal process, it can be detected whetherthe liquid removal has been performed well. In this way, based on thedetection results from the liquid detector, appropriate steps tomaintain high device productivity can be taken.

An exposure apparatus of the present invention is an exposure apparatuswhich exposes a substrate by projecting a pattern image, via aprojection optical system and a liquid, onto the substrate held by asubstrate stage, comprising: conveying the substrate from the substratestage by use of the substrate conveyance device.

Further, an exposure method of the present invention is an exposuremethod in which a substrate is exposed by projecting a pattern image,via a projection optical system and a liquid, onto the substrate held bya substrate stage, wherein the substrate is conveyed from the substratestage by use of the substrate conveyance method.

Further, a device manufacturing method of the present invention uses theexposure method.

In accordance with the present invention, based on the detection resultsfrom the liquid detector, appropriate steps to maintain high deviceproductivity can be taken, and thus a device having a desiredperformance can be produced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing an embodiment of a devicemanufacturing system as an exposure apparatus of the present invention.

FIG. 2 is a diagram when FIG. 1 is viewed from above.

FIG. 3 is a schematic diagram showing an embodiment of an exposureapparatus main body that performs exposure processes.

FIG. 4 is a diagram showing a layout example of supply nozzles andrecovery nozzles.

FIG. 5 is a schematic diagram showing an embodiment of a liquid removalsystem.

FIG. 6 is a flowchart showing an embodiment of an exposure method of thepresent invention.

FIG. 7 is a side view showing another embodiment of a liquid detectorassociated with the present invention.

FIG. 8 is a plan view of FIG. 7.

FIG. 9A is a diagram showing a state in which a detection light forliquid detection is irradiated on a substrate.

FIG. 9B is a diagram showing a state in which a detection light forliquid detection is irradiated on a substrate.

FIG. 10 a flowchart showing an example of a semiconductor devicemanufacturing process.

BEST MODE FOR CARRYING OUT THE INVENTION

In the following, referring to the drawings, a substrate conveyancedevice and an exposure apparatus of the present invention will bedescribed. FIG. 1 is a diagram showing an embodiment of a devicemanufacturing system provided with an exposure apparatus of the presentinvention and is a schematic diagram when viewed from the side; FIG. 2is a diagram when FIG. 1 is viewed from above.

In FIGS. 1 and 2, device manufacturing system SYS is provided withexposure apparatus EX-SYS and coater-developer apparatus C/D-SYS (seeFIG. 2). Exposure apparatus EX-SYS is provided with interface portion IF(see FIG. 2) that forms a connection portion thereof to coater-developerapparatus C/D-SYS, with exposure apparatus main body EX that by fillinga space between projection optical system PL and substrate P with liquidLQ and by projecting a pattern formed on a mask onto substrate P viaprojection optical system PL and liquid LQ, exposes substrate P, withconveyance system H that conveys substrate P between interface portionIF and exposure apparatus main body EX, with liquid removal system 100that is provided on the conveyance path of conveyance system H andremoves liquid LQ adhering on the surface of substrate P, with imagingdevice 80 that constitutes a liquid detector which is provided on theconveyance path of conveyance system H and detects liquid LQ adhering onsubstrate P, and with controller CONT that controls the overalloperation of exposure apparatus EX-SYS. Coater-developer apparatusC/D-SYS is provided with coater apparatus C that applies photoresist(photosensitive material) to the base material of substrate P before itexperiences an exposure process and with development apparatus(processing apparatus) D that develops substrate P after it experiencedan exposure process at exposure apparatus main body EX. Exposureapparatus main body EX is located within first chamber apparatus CH1 ofwhich cleanliness is controlled. First chamber apparatus CH1 thataccommodates exposure apparatus main body EX and second chamberapparatus CH2 that accommodates coater apparatus C and developmentapparatus D are connected to each other via interface portion IF. Notethat in the following description, coater apparatus C and developmentapparatus D that are accommodated in second chamber apparatus CH2 willbe collectively referred to as “coater-developer main body CM” asnecessary.

As shown in FIG. 1, exposure apparatus main body EX is provided withillumination optical system IL that illuminates mask M supported by maskstage MST with exposure light EL, with projection optical system PL thatprojects an image of a pattern of mask M illuminated with exposure lightEL onto substrate P, and with substrate stage PST that supportssubstrate P. Further, exposure apparatus main body EX of the embodimentis a scan type exposure apparatus (the so-called scanning stepper) inwhich while synchronously moving mask M and substrate P in mutuallydifferent directions (opposite directions) along the scanning direction,the pattern formed on mask M is exposed onto substrate P. In thefollowing description, it is assumed that the synchronous movementdirection (the scanning direction), of mask M and substrate P isreferred to as the X-axis direction in a horizontal plane, that thedirection perpendicular to the X-axis direction in the horizontal plane,is referred to as the Y-axis direction (the non-scanning direction), andthat the direction that is perpendicular to the X-axis direction and tothe Y-axis direction and coincides with optical axis AX of projectionoptical system PL is referred to as the Z-axis direction. Further, it isassumed that the rotation (inclination) directions around the X-axis,the Y-axis, and the Z-axis are respectively referred to as theθX-direction, the θY-direction, and the θZ-direction. It should be notedthat a “substrate” referred to herein comprehends a semiconductor waferover which photoresist is applied and that a “mask” comprehends areticle on which a device pattern to be reduction projected onto asubstrate is formed.

Conveyance system H is provided with first arm member H1 that carries(loads) substrate P, that has not yet experienced an exposure process,to substrate stage PST and with second arm member H2 that carries out(unloads) substrate P, that has experienced an exposure process, fromsubstrate stage PST. Substrate P that has been conveyed from coaterapparatus C and has not yet experienced an exposure process is deliveredto third arm member H3 via interface portion IF. Third arm member H3delivers substrate P to prealignment portion PAL. Prealignment portionPAL performs a rough alignment of substrate P relative to substratestage PST. Imaging device 80 is provided above prealignment portion PAL,and prealignment portion PAL is disposed within the imaging area(imaging field of view). Further, imaging device 80′ is provided abovethe conveyance path, of substrate P having experienced an exposureprocess, between substrate stage PST and holding table HT. Substrate Phaving been aligned at prealignment portion PAL is loaded on substratestage PST by first arm member H1. Substrate P having experienced anexposure process is unloaded from substrate stage PST by second armmember H2. Second arm member H2 delivers substrate P having experiencedan exposure process to holding table HT that is provided on theconveyance path of substrate P. Holding table HT constitutes a part ofliquid removal system 100 and temporarily holds the delivered substrateP. Holding table HT is disposed inside cover member 70, and cover member70 is provided with opening portion 71 and opening portion 72 for makingsubstrate P pass. Opening portion 71 and opening portion 72 are providedwith shutter portion 71A and shutter portion 72A, respectively, andshutter portion 71A and shutter portion 72A open/close opening portion71 and opening portion 72, respectively. Holding table HT is rotatablewhile holding substrate P, and substrate P of which orientation has beenchanged with the aid of the rotation of holding table HT is held byfourth arm member H4 and is conveyed to interface portion IF. SubstrateP having been conveyed to interface portion IF is delivered todevelopment apparatus D. Development apparatus D applies a developmentprocess to the delivered substrate P.

Further, first to fourth arm members H1-H4, prealignment portion PAL,imaging apparatus 80, and, also, holding table HT are disposed insidefirst chamber apparatus CH1. Here, to each of the portions, of first andsecond chamber apparatuses CH1 and CH2, that face interface portion IFare provided an opening portion and a shutter that opens/closes theopening portion. These shutters are opened during the conveyanceoperation of substrate P relative to interface portion IF.

Imaging apparatus 80 is for imaging the surface of substrate P held byprealignment portion PAL. The imaging results from imaging apparatus 80are outputted to controller CONT, and controller CONT acquires thesurface information of substrate P based on the imaging results fromimaging apparatus 80.

Imaging apparatus 80′ is for imaging the surface of substrate P havingexperienced an exposure process, before it is conveyed to holding tableHT. The imaging results from imaging apparatus 80′ are outputted tocontroller CONT, and controller CONT acquires the surface information ofsubstrate P based on the imaging results from imaging apparatus 80′.

First arm member H1 holds substrate P which has not yet experienced anexposure process and on which liquid LQ is not adhering and then loadssubstrate P on substrate stage PST. On the other hand, second arm memberH2 holds substrate P which has experienced an exposure process and onwhich liquid LQ may be adhering and then unloads substrate P fromsubstrate stage PST. Since, in this way, first arm member H1 thatconveys substrate P on which liquid LQ is not adhering is usedseparately from second arm member H2 that conveys substrate P on whichliquid LQ may be adhering, liquid LQ does not adhere to first arm memberH1, and thus adhesion of liquid LQ to, e.g., the back surface ofsubstrate P to be loaded on substrate stage PST can be prevented.Accordingly, even when it is configured such that the substrate holderof substrate stage PST vacuum sucks and holds substrate P, occurrence ofthe disadvantage that liquid LQ penetrates, via the suction holes of thesubstrate holder, to the vacuum system, e.g., a vacuum pump can beprecluded. Since, as shown in FIG. 1 the conveyance path of second armmember H2 is located under the conveyance path of second arm member H1,the possibility that liquid LQ adhering on the surface or the backsurface of substrate P adheres to substrate P which has not yet beenexposed and which is held by first arm member H1 is low.

FIG. 3 is a schematic diagram of exposure apparatus main body EX.Illumination optical system IL is for illuminating mask M supported bymask stage MST with exposure light EL and comprises an exposure lightsource, an optical integrator for uniforming the illuminance of a lightflux emitted from the exposure light source, a condenser lens forcondensing exposure light EL from the optical integrator, a relay lenssystem, a variable field stop for setting an illumination area on mask Mformed by exposure light EL to be of a slit-like shape, etc. A specifiedillumination area on mask M is illuminated, by illumination opticalsystem IL, with exposure light EL having a uniform illuminancedistribution. As exposure light EL emitted from illumination opticalsystem IL, for example, a bright line of ultraviolet region (g-line,h-line, i-line) emitted from a mercury lamp, a deep ultraviolet light(DUV light) such as a KrF excimer laser light (wavelength of 248 nm),and a vacuum ultraviolet light (VUV light) such as an ArF excimer laserlight (wavelength of 193 nm) or an F₂ excimer laser light (wavelength of157 nm) may be used. In the embodiment, description will be made withreference to a case in which an ArF excimer laser light is used.

Mask stage MST is for supporting mask M, is two-dimensionally movable ina plane perpendicular to optical axis AX, i.e., in the XY-plane, and isfinely rotatable in the θZ-direction. Mask stage MST is driven by maskstage driver MSTD such as a linear motor. Mask stage driver MSTD iscontrolled by controller CONT. On mask stage MST is set moving mirror56, and at a position facing moving mirror 56 is positioned laserinterferometer 57. The two-dimensional position and the rotation angleof mask stage MST holding mask M are measured by the laserinterferometer in real time, and the measurement results are outputtedto controller CONT. By driving mask stage driver MSTD based on themeasurement results from the laser interferometer, controller CONTperforms positioning of mask M supported by mask stage MST.

Projection optical system PL is for projecting the pattern of mask Monto substrate P at a predetermined projection magnification of f3 andis constituted by a plurality of optical elements (lenses and/ormirrors), and those optical elements are contained in lens barrel PK. Inthe embodiment, projection optical system PL is a reduction system ofwhich projection magnification β is, e.g., ¼ or ⅕. It should be notedthat projection optical system PL may also be either a unitmagnification system or a magnifying system. Further, at the end side(side of substrate P) of projection optical system PL of the embodiment,optical element (lens) 2 protrudes from lens barrel PK. Optical element2 is detachably (exchangeably) disposed relative to lens barrel PK.

Optical element 2 is made of fluorite. Since fluorite has a highaffinity for purified water, liquid LQ can be made to be in tightcontact with substantially the entire surface of the end surface (liquidcontact surface) 2 a of optical element 2. More specifically, since, inthe embodiment, it is configured such that liquid (water) LQ having ahigh affinity for liquid contact surface 2 a of optical element 2 issupplied, the contact degree between liquid contact surface 2 a ofoptical element 2 and liquid LQ is high. It should be noted that opticalelement 2 may be made of quartz, which has a high affinity for water.Further, it may be configured such that liquid contact surface 2 a ofoptical element 2 is applied with hydrophilic (lyophilic) treatment toenhance the affinity for liquid LQ.

Substrate stage PST is for supporting substrate P and is provided with Zstage 51 that holds substrate P via a substrate holder, XY stage 52 thatsupports Z stage 51, and base 53 that supports XY stage 52. Substratestage PST is driven by substrate stage driver PSTD such as a linearmotor. Substrate stage driver PSTD is controlled by controller CONT. Bydriving Z stage 51, the Z-direction position (focus position) and theex- and θY-direction positions of substrate P held by Z stage 52 arecontrolled. Further, by driving XY stage 52, the XY-direction position(the position in the direction substantially parallel to the image planeof projection optical system PL) of substrate P is controlled. Morespecifically, Z stage 51, by controlling the focus position andinclination angle of substrate P, makes the surface of substrate P tocoincide with the image plane of projection optical system PL by meansof an autofocus system and an autoleveling system; XY stage 52 performspositioning of substrate P in the X-axis and Y-axis directions. It is tobe noted that needless to say, the Z stage and the XY stage may beintegrally constructed.

On substrate stage PST (Z stage 51) is set moving mirror 54. Further,laser interferometer 55 is positioned at a position facing moving mirror54. The two-dimensional position and the rotation angle of substrate Pon substrate stage PST are measured by laser interferometer 55 in realtime, and the measurement results are outputted to controller CONT. Bydriving substrate stage driver PSTD based on the measurement resultsfrom laser interferometer 55, controller CONT performs positioning ofsubstrate P supported by substrate stage PST.

In the embodiment, a liquid immersion method is applied to, with theexposure wavelength being shortened in effect, improve the resolutionand, at the same time, to widen the depth of focus in effect. For thatpurpose, at least while the pattern image of mask M is being transferredonto substrate P, the space between the surface of substrate P and theend surface 2 a of optical element 2 of projection optical system PL isfilled with the predetermined liquid LQ. As described above, opticalelement 2 protrudes at the end side of projection optical system PL, andit is configured such that liquid LQ is in contact with only opticalelement 2. By this, for example, rusting of lens barrel PK made of ametal is prevented. In the embodiment, purified water is used as liquidLQ. Purified water can transmit not only ArF excimer laser light, butalso exposure light EL even when it is, for example, a bright line ofultraviolet region (g-line, h-line, or i-line) emitted from a mercurylamp or deep ultraviolet light (DUV light) such as KrF excimer laserlight (wavelength of 248 nm).

Exposure apparatus main body EX is provided with liquid supply mechanism10 that supplies liquid LQ to the space between the surface of substrateP and the end surface 2 a of optical element 2 of projection opticalsystem PL and with liquid recovery mechanism 20 that recovers liquid LQon substrate P. Liquid supply mechanism 10 is for supplying thepredetermined liquid LQ to form liquid immersion region AR2 on substrateP and is provided with liquid supply device 11 that is capable ofdelivering liquid LQ and with supply nozzles 13 that are connected toliquid supply device 11 via supply pipe 12 and has a supply port thatsupplies, on substrate P, liquid LQ delivered from liquid supply device11. Supply nozzle 13 is disposed in close vicinity to the surface ofsubstrate P.

Liquid supply device 11 is provided with a tank that stores liquid LQ, apressurizing pump, etc. and supplies liquid LQ onto substrate P viasupply pipe 12 and supply nozzles 13. Further, the liquid supplyoperation of liquid supply device 11 is controlled by controller CONT,and controller CONT can control the per-unit-time liquid supply amountonto substrate P by liquid supply device 11. Further liquid supplydevice 11 has a temperature adjustment mechanism of liquid LQ, and it isconfigured such that liquid LQ having substantially the same temperature(e.g., 23° C.) as the temperature in the chamber in which the exposureapparatus is accommodated is supplied onto substrate P.

Liquid recovery mechanism 20 is for recovering liquid LQ on substrate Pand is provided with recovery nozzles 23 that are disposed in closevicinity to, but not in contact with, the surface of substrate P andwith liquid recovery device 21 that is connected to this recoverynozzles 23 via recovery pipe 22. Liquid recovery device 21 is providedwith a vacuum system (suction device), e.g., a vacuum pump, a tank thatstores liquid LQ recovered, etc. and recovers liquid LQ on substrate Pvia recovery nozzles 23 and recovery pipe 22. Further, the liquidrecovery operation of liquid recovery device 21 is controlled bycontroller CONT, and controller CONT can control the per-unit-timeliquid recovery amount by liquid recovery device 21.

During scanning exposure, a pattern image of a part of mask M isprojected onto the rectangular projection area AR1 beneath opticalelement 2 located at the end of projection optical system PL, and insynchronization with the movement of mask M in the −X direction (or inthe +X direction) at speed V, substrate P moves, via XY stage 52, in the+X direction (or in the −X direction) at speed β·V (β is the projectionmagnification). And, after completion of exposure of one shot area, anext shot area is brought to the scanning starting point through thestepping movement of substrate P, and in this way, exposure of each shotarea is successively performed through the step-and-scan method. In theembodiment, it is set such that liquid LQ is made to flow along themoving direction of substrate P.

FIG. 4 is a diagram illustrating the relationship among projection areaAR1 of projection optical system PL, supply nozzles 13 (13A-13C) thatsupply liquid LQ in the x-direction, and recovery nozzles 23 (23A, 23B)that recover liquid LQ. In FIG. 4, the shape of projection area AR1 isof a rectangle shape elongated in the Y-direction; three supply nozzles13A-13C are disposed in the +X direction side and two recovery nozzles23A and 23B are disposed in the −X direction side so that projectionarea AR1 is located between the three supply nozzles and the tworecovery nozzles. And, supply nozzles 13A-13C are connected to liquidsupply device 11 via supply pipe 12, and recovery nozzles 23A and 23Bare connected to liquid recovery device 21 via recovery pipe 22.Further, supply nozzles 15A-15C and recovery nozzles 25A and 25B aredisposed in the positional relationship in which supply nozzles 13A-13Cand recovery nozzles 23A and 23B are rotated by substantially 180degrees. Supply nozzles 13A-13C and recovery nozzles 25A and 25B aredisposed alternately in the Y-direction; supply nozzles 15A-15C andrecovery nozzles 23A and 23B are disposed alternately in theY-direction; supply nozzles 15A-15C are connected to liquid supplydevice 11 via supply pipe 14; recovery nozzles 25A and 25B are connectedto liquid recovery device 21 via recovery pipe 24.

When scan-exposing substrate P by moving the substrate in the scanningdirection (−X direction) indicated by arrow Xa, the supply and therecovery of liquid LQ are performed by liquid supply device 11 andliquid recovery device 21, by the use of supply pipe 12, supply nozzles13A-13C, recovery pipe 22, and recovery nozzles 23A and 23B. Morespecifically, when substrate P moves in the −X direction, liquid LQ issupplied, from liquid supply device 11, onto substrate P via supply pipe12 and supply nozzles 13 (13A-13C), and, at the same time, liquid LQ isrecovered by and into liquid recovery device 21 via recovery nozzles 23(23A, 23B) and recovery pipe 22, with liquid LQ flowing in the −Xdirection such that the space between projection optical system PL andsubstrate P is filled with the liquid. On the other hand, whenscan-exposing substrate P by moving the substrate in the scanningdirection (+X direction) indicated by arrow Xb, the supply and therecovery of liquid LQ are performed by liquid supply device 11 andliquid recovery device 21, by the use of supply pipe 14, supply nozzles15A-15C, recovery pipe 24, and recovery nozzles 25A and 25B. Morespecifically, when substrate P moves in the +X direction, liquid LQ issupplied, from liquid supply device 11, onto substrate P via supply pipe14 and supply nozzles 15 (15A-15C), and, at the same time, liquid LQ isrecovered by and into liquid recovery device 21 via recovery nozzles 25(25A, 25B) and recovery pipe 24, with liquid LQ flowing in the +Xdirection such that the space between projection optical system PL andsubstrate P is filled with the liquid. In this way, controller CONT, byusing liquid supply device 11 and liquid recovery device 21, makesliquid LQ flow along the moving direction of substrate P and in the samedirection as the moving direction of substrate P. In this case, liquidLQ supplied from liquid supply device 11 via, e.g., supply nozzles 13flows in the manner that the liquid, being induced by the −X directionmovement of substrate P, is pulled into the space between projectionoptical system PL and substrate P, and thus, even if the supply energyof liquid supply device 11 is small, liquid LQ can be easily supplied tothe space between projection optical system PL and substrate P. And, bychanging, in response to the scanning direction, the direction in whichliquid LQ is made to flow, the space between projection optical systemPL and substrate P can be filled with liquid LQ, in both of the casewhere substrate P is scanned in the +X direction and in the case wheresubstrate P is scanned in the −X direction, which makes it possible toobtain a high resolution and a wide depth of focus.

FIG. 5 is a diagram showing liquid removal system 100. Second arm memberH2 holding substrate P having experienced a liquid immersion exposureprocess enters, through opening portion 71, cover member 70accommodating holding table HT. During this process, by driving shutterportion 71A, controller CONT keeps opening portion 71 open. On the otherhand, opening portion 72 is closed by shutter portion 72A. And, beforesubstrate P is delivered to holding table HT, a blowing nozzle, notshown, by blowing a gas against the back surface of substrate P, removesthe liquid adhering on the back surface of substrate P. Subsequently,second arm member H2 delivers substrate P to holding table HT. Holdingtable HT vacuum sucks and holds the delivered substrate P.

Inside cover member 70 is disposed blowing nozzle 103 that constitutes apart of liquid removal system 100, and to blowing nozzle 103 isconnected gas supply system 104 via flow path 105. In flow path 105 isprovided a filter that removes the foreign substances (dust and/or oilmist) in the gas to be blown against substrate P. And, with gas supplysystem 104 being driven, a predetermined gas is blown against thesurface of substrate P via flow path 105, and liquid LQ adhering on thesurface of substrate P is, by the blown gas, blown off and removed.

To cover member 70 is connected liquid recovery portion 800 via recoverypipe 81. To recovery pipe 81 is provided bulb 82 that opens/closes theflow path of recovery pipe 81. Liquid LQ having been blown off fromsubstrate P is recovered by liquid recovery portion 800, which isconnected to cover member 70. By sucking the gas inside cover member 70along with the flying liquid LQ, liquid recovery portion 800 recoversliquid LQ having been blown off from substrate P. Here, liquid recoveryportion 800 continuously performs the sucking operation of the gasinside cover member 70 and the flying liquid LQ. By this, liquid LQ doesnot stay inside cover member 70, e.g., on the inner walls and/or bottomof cover member 70, and thus the humidity in cover member 70 does notfluctuate significantly. Further, even when shutter portions 71A and 72Aare opened, damp gas inside cover member 70 does not flow out to theoutside of cover member 70.

It should be noted that while in the embodiment, by blowing a gasagainst substrate P, liquid removal system 100 removes liquid LQ, liquidLQ adhering on substrate P can be removed also by, for example, suckingliquid LQ adhering on substrate P, by vaporizing liquid LQ by supplyinga dry gas (dry air), or by blowing off the adhering liquid LQ byspinning substrate P around. Also, by bringing an absorbent materialinto contact with substrate P to absorb the adhering liquid LQ, theliquid can be removed.

Next, the operations of the above-described exposure apparatus main bodyEX and conveyance system H will be described referring to the flow chartdiagram of FIG. 6. Substrate P that has not yet been exposed isdelivered by third arm member H3 from coater apparatus C to prealignmentportion PAL. Prealignment portion PAL performs a rough alignment ofsubstrate P that has not yet been exposed. Subsequently, imaging device80 images the surface of the aligned substrate P that has not yet beenexposed. By doing so, first information (imaging information) on thesurface of the aligned substrate P that has not yet been exposed isacquired (step S1). The acquired first information on the surface ofsubstrate P is stored in controller CONT.

Next, substrate P having been aligned at prealignment portion PAL isloaded, by first arm member H1, on substrate stage PST of exposureapparatus main body EX. Substrate P held by substrate stage PST issubjected to a liquid immersion exposure process (step S2).

After the exposure processes on all of the multiple shot areas set onsubstrate P are completed, controller CONT stops the liquid supply ontosubstrate P by liquid supply mechanism 10. Meanwhile, controller CONTcontinues to drive liquid recovery mechanism 20 for a predeterminedperiod of time even after stopping the liquid supply operation by liquidsupply mechanism 10. By this, liquid LQ on substrate P is sufficientlyrecovered.

Substrate P having been exposed is unloaded from substrate stage PST bysecond arm member H2. Second arm member H2 conveys substrate P held bythe arm member toward holding table HT of liquid removal system 100.Here, liquid LQ may be adhering on the surface of substrate P and/or onthe area, of the back surface of substrate P, other than the areasupported by second arm member H2. However, since as shown in FIG. 1, tothe conveyance path between substrate stage PST and holding table HT,among the conveyance path of substrate P, is arranged recovery mechanism60 that recovers liquid LQ having dropped from substrate P having beenexposed, the liquid LQ's adhesion and/or scattering to the surroundingdevices and/or members on the conveyance path from substrate P can beprevented even if substrate P is conveyed in a state that liquid LQ isadhering on substrate P. Here, recovery mechanism 60 is provided, asshown in FIG. 1, with drainpipe member 61 disposed under the conveyancepath of second arm member H2 and liquid suction device 62 that drainsliquid LQ recovered via drainpipe member 61 from drainpipe member 61.Drainpipe member 61 is provided inside first chamber apparatus CH1, andliquid suction device 62 is provided outside first chamber apparatusCH1. Drainpipe member 61 and liquid suction device 62 are connected viaconduit 63, and conduit 63 is provided with bulb 63A that opens/closesthe flow path of conduit 63.

Liquid LQ may drop from the exposed substrate P on which liquid LQ isadhering is being conveyed by second arm member H2. However, the liquidLQ having dropped can be recovered by drainpipe member 61. By recoveringthe dropped liquid LQ by drainpipe member 61, disadvantages, e.g., thedisadvantage that liquid LQ scatters around the conveyance path, can beprevented. Further, liquid suction device 62, by sucking liquid LQ ondrainpipe member 61 provided inside first chamber apparatus CH1, drainsthe liquid to the outside of first chamber apparatus CH1, which can makeliquid LQ not stay on drainpipe member 61 located inside first chamberapparatus CH1, and thus the disadvantage that humidity fluctuation(ambience fluctuation) occurs in first chamber apparatus CH1 can beprevented. Here, liquid suction device 62 may continuously perform thesuction operation of liquid LQ recovered by drainpipe member 61 or mayintermittently perform the suction operation (draining operation) onlyfor a preset period of time. Since with the suction operation beingcontinuously performed, liquid LQ does not stay on drainpipe member 61,the humidity fluctuation in first chamber apparatus CH1 can be preventedmore effectively. On the other hand, by not performing the suctionoperation by liquid suction device 62 during the exposure of substrate Pin exposure apparatus main body EX and by performing the suctionoperation only for the time period other than the exposure time period,such a disadvantage as that vibrations generated by the suctionoperation affect the exposure accuracy can be precluded.

Before substrate P having experienced an exposure process is conveyed toholding table HT of liquid removal system 100, the substrate ispositioned under imaging device 80′. And, imaging device 80′ acquiressecond information (imaging information) on the surface of substrate Phaving experienced an exposure process (step S3).

After the second information on the surface of substrate P havingexperienced an exposure process has been acquired, second arm member H2holding substrate P having experienced an exposure process enters covermember 70 through opening portion 71 to convey substrate P havingexperienced an exposure process to holding table HT.

Controller CONT compares the imaging information acquired in step S1with the imaging information acquired in step S3 and detects whether theliquid is adhering on substrate P having experienced an exposure process(step S4).

Since the imaging condition in which liquid LQ is adhering on thesurface of substrate P and the imaging condition in which liquid LQ isnot adhering thereon differ from each other, controller CONT can, bycomparing the imaging information on the surface of substrate P that hasnot yet been exposed with the imaging information on the surface ofsubstrate P that has been exposed, detect whether liquid LQ is adheringthereon. Further, if the position of substrate P at the time of imagingin step S1 coincide with the position of substrate P at the time ofimaging in step S3, then controller CONT can determine the informationon the position of the liquid (droplet) adhering on substrate P and alsothe information on the size of the droplet.

It is to be noted that since, even when the position of substrate P atthe time of imaging in step S1 does not coincide with the position ofsubstrate P at the time of imaging in step S3, on the peripheral portionof substrate P is formed a cut portion (an orientation flat or a notch)for detecting the position of substrate P, controller CONT can, withreference to the cut portion, make the imaging information in step S1and the imaging information in step S3 coincide with each other on adata basis.

Controller CONT determines whether the detected amount of liquid LQ onsubstrate P exceeds a preset threshold value. Subsequently, based on thedetermination result, controller CONT determines whether the removaloperation of liquid LQ adhering on substrate P should be performed (stepS5).

When it is determined in step S5 that the detected amount does notexceed the threshold value, controller CONT determines that the liquidremoval operation is unnecessary and by using fourth arm member H4,etc., conveys substrate P from holding table HT to development device D,via interface portion IF. In other words, when the amount of liquid LQadhering on substrate P is very small (does not exceed the thresholdvalue) and thus is in the range in which the amount does not affect thedevice performance and/or the processing (development process),controller CONT determines that the liquid removal operation isunnecessary. By this, it is prevented that although liquid LQ is notadhering on substrate P, the liquid removal operation is performed againby using liquid removal system 100; and thus the operation efficiencycan be improved. It is to be noted that the above-described thresholdvalue has been determined beforehand through, e.g., an experiment andhas been stored in controller CONT.

In contrast, when it is determined in step S5 that the detected amountexceeds the threshold value, controller CONT activates liquid removalsystem 100. In this process, controller CONT sets, based on the detectedliquid information, the liquid removal operation conditions under whichthe liquid removal from substrate P on which liquid LQ is adhering isperformed (step S6).

Since, in step S4, the amount (the size of droplet) and/or the positioninformation of liquid LQ adhering on substrate P have been detected,controller CONT sets, based on, e.g., the amount (the size of droplet)of liquid LQ adhering on substrate P, the flow velocity (per-unit-timeblown gas amount) and the blowing time of the gas to be blown fromblowing nozzle 103. Alternatively, controller CONT may also set, basedon the position information of liquid LQ adhering on substrate P, theposition on substrate P against which the gas is to be blown by blowingnozzle 103. For example, by doing so, when the adhering liquid amount issmall, by setting the liquid removal operation time (gas blowing time)to be a short time, the operation time can be shortened; in contrast,when the adhering liquid amount is large, by setting the liquid removaloperation time (gas blowing time) to be a long time, liquid LQ can bereliably removed.

Alternatively, the liquid removal operation conditions may be set inaccordance with the resist condition of substrate P and the liquidcondition including the physical properties of liquid LQ. Morespecifically, since the easiness with which liquid LQ is blown off fromsubstrate P may vary depending upon the physical properties of theresist and the liquid LQ, it can be configured, for example, such thatin the case of a condition under which the liquid can be easily blownoff, the gas blowing time is shortened, and in the case of a conditionunder which the liquid can not be easily blown off, the gas blowing timeis increased, or the flow velocity of the gas blown is increased.

Further, after obtaining a record of liquid detection results regardinga plurality of substrates P, the liquid removal operation conditions maybe set based on the record information. More specifically, since, asdescribed above, the easiness with which liquid LQ is removed may varydepending upon the resist conditions and the liquid conditions, byobtaining the record of the liquid amount remaining on the substrates Pcorresponding to the resist conditions and the liquid conditions,optimum liquid removal operation conditions can be set based on theobtained results.

After setting the liquid removal operation conditions, controller CONTblows the gas against substrate P from blowing nozzle 103 and removesthe adhering liquid LQ (step S7).

Further, after performing the liquid removal operation, controller CONTconvey again, by using fourth arm member H4, etc., substrate P to theinside of the imaging area of imaging device 80′ and images the surfaceof substrate P by the use of imaging device 80′. Thereafter, theabove-described processes are repeated until the amount of the adheringliquid LQ comes not to exceed the threshold value.

As described above, with liquid LQ adhering on substrate P beingdetected by using imaging device 80′ when substrate P having been liquidimmersion exposed is conveyed, for example, in the case where liquid LQis adhering on substrate P, substrate P can be conveyed to apredetermined process device, e.g., development device D, after theliquid has been removed by liquid removal system 100. Thus, the process,e.g., the development process can be performed without being affected byliquid LQ, and thus a device having a desired performance can beproduced. In addition, in the case where based on the liquid detectionresults, it is determined that liquid LQ is not adhering on substrate P,the liquid removal operation can be omitted, which improves theoperation efficiency. Further, with the detection of liquid on substrateP being performed again after the liquid removal operation has beenperformed, it can be detected whether the liquid removal has beenperformed well. Further, with the liquid removal operation beingperformed based on the liquid detection results, occurrence of, e.g.,the disadvantage that liquid LQ drops from substrate P being conveyedonto the conveyance path can be prevented. Still further, in the casewhere it is configured such that the arm members of conveyance system Hvacuum suck and hold substrate P, with liquid LQ adhering on substrate Pbeing removed, occurrence of, e.g., the disadvantage that liquid LQpenetrates the vacuum system and the vacuum system breaks down can beprevented.

Furthermore, since the embodiment is configured such that for a singlesubstrate P, the surface information before the exposure is comparedwith the surface information after the exposure and before thedevelopment, the information on the liquid adhering substrate P can beobtained with high accuracy.

It is to be noted that imaging device 80′ may be provided in thevicinity of substrate stage PST or in the vicinity of liquid removalsystem 100 so long as the imaging device is disposed above theconveyance path of substrate P having experienced an exposure processbetween substrate stage PST and holding table HT. Further, by movablyproviding imaging device 80 above the conveyance path between substratestage PST and holding table HT, imaging device 80′ may be omitted.Further, it may also be configured such that imaging device 80′ isprovided inside cover member 70.

It should be noted that it can also be configured such that in order todetect liquid LQ adhering on the surface of substrate P, by irradiatinga detection light on the surface of substrate P before exposure and byreceiving the detection light reflected by the surface of substrate P bythe imaging device or a predetermined photodetector to obtain firstlight reflectivity information of the surface of substrate P and then byirradiating the detection light on the surface of substrate P afterexposure and by receiving the detection light reflected by the surfaceof substrate P by to obtain second light reflectivity information of thesurface of substrate P, it is detected, based on the first lightreflectivity information and the second light reflectivity information,whether liquid LQ is adhering on substrate P. Since the lightreflectivity of liquid LQ and the light reflectivity of the surface(resist) of substrate P differ from each other, the light reflectivityof substrate P on which liquid LQ is adhering and the light reflectivityof substrate P on which liquid LQ is not adhering differ from eachother. Thus, by obtaining the first light reflectivity information andthe second light reflectivity information, liquid LQ can be detected. Itis to be noted that the second light reflectivity information includesthe light reflectivity information of the surface of substrate P afterexposure and the light reflectivity information of liquid LQ.

It is to be noted that besides the configuration in which afterdetecting the light reflectivity information of the surface of a singlesubstrate P before exposure, the light reflectivity information of thesurface of substrate P after exposure is detected, it can be alsoconfigured, for example, such that with the light reflectivityinformation of the surface of substrate P in a state that liquid LQ isadhering on the surface and the light reflectivity information ofsubstrate P in a state that liquid LQ is not adhering on substrate Pbeing obtained beforehand through, e.g., an experiment or a simulationand being stored in controller CONT, it is determined, based on thedetection results of the light reflectivity of the surface of substrateP after exposure and the above-described stored information, whetherliquid LQ is adhering on substrate P.

It is to be noted that it may also be configured such that with thesurface of substrate P being imaged by the imaging device and with theimaging results being outputted on a monitor, an operator determineswhether liquid LQ is adhering on the surface. Further, it may also beconfigured such that with substrate P being irradiated with a light(monochromatic light) and with the image obtained by imaging substrate Pbeing subjected to an image processing, it is determined based on theimage processing results whether liquid LQ is adhering on the substrate.Further, before imaging the surface by the imaging device, substrate Pmay be inclined or rotated.

It is to be noted that while, in the embodiment, it is detected whetherliquid LQ is adhering on the surface (exposure surface) of substrate P,it may also be detected whether the liquid is adhering on the backsurface of substrate P, wherein the back surface is to be supported bypredetermined supporting members such as the arm members. Thus, based onthe detection results, the removal operation of the liquid adhering onthe back surface of substrate P can be performed.

FIGS. 7 and 8 show another embodiment of the liquid detector; FIG. 7 isa side view; FIG. 8 is a plan view.

Liquid detector 90 is for optically detecting liquid LQ adhering on thesurface of substrate P and is provided with irradiation system 91 thatirradiates a detection light on the surface of substrate P afterexposure and with light receiving system 92 that receives the detectionlight reflected by the surface of substrate P. It is to be noted thatwhile in the following description, the detection light is irradiated onsubstrate P in a state that substrate P is held by prealignment portionPAL, the detection light may be irradiated on substrate P in a statethat substrate P is held by a predetermined supporting member provided,within the conveyance path range of substrate P, at a position separatefrom that of prealignment portion PAL.

Irradiation system 91 irradiates the detection light from a directioninclined relative to the surface of substrate P. Irradiation system 91has a plurality of irradiation units 91A that are laid side-by-side in apredetermined direction (in this embodiment, in the Y-axis direction),and the detection light is irradiated on substrate P from each ofirradiation units 91A. All of the incidence angles of the detectionlights irradiated from the plurality of irradiation units 91A relativeto the surface of substrate P are set to be the same angle. Lightreceiving system 92 has a plurality of light receiving units 92A thatcorrespond to irradiation units 91A of irradiation system 91. Whenliquid LQ is not present on substrate P, the detection light projectedfrom each of irradiation units 91A is reflected by the surface ofsubstrate P and is received by light receiving units 92A.

Further, light receiving system 92 has light receiving units 92B and 92Ceach of which is positioned at a position where the detection lightsfrom irradiation system 91 is not incident on the light receivingportion, and the scattered lights generated when the detection lightsfrom irradiation system 91 hit liquid LQ on the surface of substrate Pand are reflected thereby are received by the light receiving units 92Band 92C. It should be noted that in the case where by using liquiddetector 90, liquid LQ on the surface of substrate P is detected, it maybe configured such that with liquid detector 90 and substrate P beingrelatively moved, the detection lights are irradiated on the surface ofsubstrate P.

For example, when, as shown in FIG. 9A, the detection light is a spotlight and the diameter of its light beam is D1, by projecting thedetection light from a direction inclined relative to the surface ofsubstrate P, the detection light on substrate P comes to have a form ofan ellipsoid having its longitudinal direction in the X-direction(scanning direction), as shown in FIG. 9B. The longitudinal directionsize D2 of the elliptical detection area on substrate P of the detectionlight is larger than the above-mentioned diameter D1. In other words,while, for example, when the detection light is irradiated from aperpendicular direction relative to the surface of substrate P, theX-direction size of the detection area of the detection light becomesD1, by irradiating the detection light from the inclined direction, thedroplet of liquid LQ can be detected in the detection area, which hasthe X-direction size D2, which is larger than D1. Thus, when detectingthe droplet of liquid LQ on substrate P by relatively moving liquiddetector 90 and substrate P, the droplet comes to be detected in thelarger detection area compared with the detection area of D1, and thusliquid detector 90 can improve the droplet detection accuracy. It is tobe noted that the above description has been made on the assumption thatthe detection light is a spot light; however, a similar effect can beobtained even when the detection light is a slit light.

The detection light from irradiation system 91 is irradiated on thesurface of substrate P. Here, when liquid LQ is present (adhering) onthe surface of substrate P, the detection light irradiated on liquid LQis scattered. Due to the scattering of a part of the detection lightirradiated on liquid LQ, intense lights that are not detected in normalconditions enter light receiving units 92B and 92C, and the lightintensity received by light receiving units 92A which corresponds to thedetection light decreases. The detection results of light receivingunits 92A, 92B, and 92C are outputted to controller CONT, and controllerCONT can detect whether liquid LQ is adhering on the surface ofsubstrate P, based on the light intensities detected by this lightreceiving system 92.

Here, controller CONT can determine the size and/or the amount of liquidLQ (droplet), based on the light intensities detected by light receivingunits 92B and 92C. For example, since the angle of the scattered lightvaries depending upon the droplet size, controller CONT can, bydetermining the direction of the scattered light from liquid LQ(droplet) based on the detection results of light receiving units 92Band 92C, determine the size of liquid LQ (droplet). Further, bydetecting the light intensities of the received lights, controller CONTcan also determine the per-unit-area amount of liquid LQ (droplet) onthe substrate P.

In this process, with a position detection device that detects therelative position in the XY-direction between the holding member, ofprealignment portion PAL, that holds substrate P and liquid detector 90being provided, the position of substrate P is identified, based on thedetection results of the position detection device. In addition, thepositional relationship in the Y-direction of light receiving units 92Athat have received the detection light irradiated on liquid LQ (droplet)is identified, based on the design values. Thus, controller CONT canidentify the position, on substrate P, at which liquid LQ (droplet) ispresent, based on the detection results of the position detection deviceand the information on the disposed position of light receiving portions92A at which the light intensity received has decreased.

It is to be noted that as the detection light to be irradiated onsubstrate P, for example, an ultraviolet light, a visible light, or aninfrared light that has a wavelength to which the photoresist is notsensitive may be used. In the case where an infrared light is used,since the liquid (water) absorbs the infrared light and thus by the useof the infrared light, the light receiving conditions of light receivingsystem 92 significantly changes, it can be detected with high accuracywhether liquid LQ is adhering on substrate P.

As described above, liquid LQ of the embodiments is constituted bypurified water. Purified water has the advantage that it is easilyavailable in bulk in, e.g., semiconductor manufacturing factories andalso the advantage that it does not adversely affect photoresist onsubstrate P, optical elements (lenses), etc. Further, purified waterdoes not adversely affect the environment and contains scarcely anyimpurities; thus, the effect that it cleans the surface of substrate Pand the surface of the optical element provided at the end portion ofprojection optical system PL can be expected.

Further, the refractive index n of purified water (water) relative toexposure light EL having a wavelength of about 193 nm is said to beapproximately 1.44, and thus, when ArF excimer laser light (having 193nm wavelength) is used as the light source of exposure light EL, thewavelength is effectively shortened, on substrate P, as multiplied by1/n, i.e., effectively becomes approximately 134 nm, and a highresolution can be obtained. Further, since the depth of focus increasesby approximately n times, i.e., approximately by 1.44 times, comparedwith that in the air, when securing of the depth of focus on par withthe depth of focus realized when the projection optical system is usedin the air suffices, the numerical aperture of the projection opticalsystem PL can be further increased, which also improves the resolution.

While, in the embodiment, lens 2 is attached to the end portion ofprojection optical system PL, an optical plate for adjusting the opticalcharacteristics, e.g., aberrations (spherical aberration, comaaberration, etc.), of projection optical system PL may be utilized asthe optical element to be attached to the end portion of projectionoptical system PL. Alternatively, a plane parallel plate that cantransmit exposure light EL may be utilized.

It should be noted that if the pressure, caused by the flow of liquidLQ, of the space between the optical element located at the end portionof projection optical system PL and substrate P is high, it may beconfigured such that the optical element is rigidly fixed so as not tomove due to the pressure, instead of making the optical elementreplaceable.

It should be noted that while, in the embodiment, it is configured suchthat the space between projection optical system PL and the surface ofsubstrate P is filled with liquid LQ, it may also be configured, forexample, such that the space is filled with liquid LQ in the conditionthat a cover glass constituted by a plane parallel plate is attached tothe surface of substrate P.

It should be noted that while, in the embodiments, liquid LQ is water,liquid LQ may be a liquid other than water. For example, when the lightsource of exposure light EL is an F₂ laser, the F₂ laser light does nottransmit through water, and thus, as liquid LQ, a fluorofluid that cantransmit the F₂ laser light, such as perfluoropolyether (PFPE) orfluorochemical oil, may be used. Further, as liquid LQ, a material(e.g., cedar oil) that can transmit exposure light EL, has a highrefractive index as high as practicable, and does not affect projectionoptical system PL and the photoresist applied to the surface ofsubstrate P can also be used.

It is to be noted that as the substrate P of each of the above-describedembodiments, not only a semiconductor wafer for manufacturing asemiconductor device, but also a glass substrate for a display device, aceramic wafer for a thin film magnetic head, a master mask or reticle(synthetic quartz or silicon wafer), etc. can be used.

Further, while, in the above-described embodiment, the exposureapparatus in which the space between projection optical system PL andsubstrate P is locally filled with the liquid, the present invention canalso be applied to such a liquid immersion exposure apparatus, asdisclosed in Japanese Unexamined Patent Publication Hei 6-124873, inwhich a stage holding a substrate to be exposed is made to move in aliquid bath and to such a liquid immersion exposure apparatus, asdisclosed in Japanese Unexamined Patent Publication Hei 10-303114, inwhich a liquid bath having a predetermined depth is formed on a stage,and a substrate is held the liquid bath.

As the exposure apparatus (exposure apparatus main body) EX, in additionto a scan type exposure apparatus (scanning stepper) in which whilesynchronously moving mask M and substrate P, the pattern of mask M isscan-exposed, a step-and-repeat type projection exposure apparatus(stepper) in which the pattern of mask M is exposed at one time in thecondition that mask M and substrate P are stationary, and substrate P issuccessively moved stepwise can be used. Also, the present invention canbe applied to a step-and-stitch type exposure apparatus in which atleast two patterns are transferred onto substrate P in a partiallyoverlapping manner.

As the type of exposure apparatus EX, the present invention is notlimited to an exposure apparatus, which exposes a semiconductor patternonto substrate P, for manufacturing semiconductor devices, but can alsobe applied to a variety of exposure apparatuses, e.g., an exposureapparatus for manufacturing liquid crystal display devices or displays,an exposure apparatus for manufacturing thin film magnetic heads, anexposure apparatus for manufacturing image pickup devices, and anexposure apparatus for manufacturing reticles or masks.

When using a linear motor (see U.S. Pat. No. 5,623,853 or U.S. Pat. No.5,528,118) in substrate stage PST and/or mask stage MST, eitherair-cushion type linear motor using an air bearing or a magneticlevitation type linear motor using a Lorentz force or reactance forcemay be used. Further, each of substrate stage PST and mask stage MST maybe either of a type moving along a guide or of a guideless type havingno guide.

As the driving mechanism for each of substrate stage PST and mask stageMST, a planar motor in which by making a magnet unit in which magnetsare two-dimensionally arranged and an armature unit in which coils aretwo-dimensionally arranged face each other, each of substrate stage PSTand mask stage MST is driven by an electromagnetic force may be used. Inthis case, either one of the magnet unit and the armature unit isattached to stage PST or stage MST, and the other unit is attached tothe moving surface side of stage PST or stage MST.

A reaction force generated by the movement of substrate stage PST maybe, as described in Japanese Unexamined Patent Publication Hei 8-166475(U.S. Pat. No. 5,528,118), mechanically released to the floor (earth) byuse of a frame member so that the force does not transmit to projectionoptical system PL. A reaction force generated by the movement of maskstage MST may be, as described in Japanese Unexamined Patent PublicationHei 8-330224 (U.S. patent application Ser. No. 08/416,558), mechanicallyreleased to the floor (earth) by use of a frame member so that the forcedoes not transmit to projection optical system PL.

As described above, exposure apparatus EX according to the embodimentsof the present application is built by assembling various subsystems,including each element listed in the claims of the present application,in such a manner that prescribed mechanical accuracy, electricalaccuracy, and optical accuracy are maintained. In order to ensure thevarious accuracies, prior to and after the assembly, every opticalsystem is adjusted to achieve its optical accuracy, every mechanicalsystem is adjusted to achieve its mechanical accuracy, and everyelectrical system is adjusted to achieve its electrical accuracy. Theprocess of assembling each subsystem into the exposure apparatusincludes mechanical interfaces, electrical circuit wiring connections,and air pressure plumbing connections between each subsystem. Needlessto say, there is also a process where each subsystem is assembled priorto the assembling of the exposure apparatus from the various subsystems.On completion of the process of assembling the various subsystems in theexposure apparatus, overall adjustment is performed to make sure thatvarious accuracies of the complete exposure apparatus are achieved.Additionally, it is desirable to manufacture the exposure apparatus in aclean room, in which the temperature, purity, etc. are controlled.

As shown in FIG. 10, microdevices such as semiconductor devices aremanufactured by a series of steps, including: step 201 in which themicro device's function and performance design is performed; step 202 inwhich a mask (reticle) is manufactured based on the design step; step203 in which a substrate, the device's base material, is manufactured;step 204 in which the mask pattern is exposed onto the substrate byexposure apparatus EX according to the above-described embodiments;device assembly step 205 (including the dicing process, bonding process,and packaging process); inspection step 206.

1. A lithographic projection apparatus comprising: a substrate tableconfigured to hold a substrate; a projection system arranged to projecta patterned beam of radiation onto the substrate; a liquid supply systemconfigured to supply liquid to a space between the projection system andthe substrate; and a residual liquid detector configured to detectliquid remaining on the substrate after an exposure is completed.
 2. Theapparatus according to claim 1, further comprising a drying stationconfigured to dry the substrate in the event that liquid is detected bythe residual liquid detector.
 3. The apparatus according to claim 1,wherein the residual liquid detector comprises one or more devicesselected from the group comprising a camera, an infrared sensor, and adetector to detect scattered light.
 4. The apparatus according to claim1, wherein the projection system is provided at an exposure station andthe residual liquid detector is provided at a measurement station, themeasurement station being physically separate from the exposure station.5. The apparatus according to claim 1, wherein the residual liquiddetector is configured to generate, upon detection of residual liquid, asignal to instruct performance of a drying action.
 6. A devicemanufacturing method comprising projecting, using a projection system ofa lithographic apparatus, a patterned beam of radiation through a liquidonto a substrate, the substrate being held by a substrate table, and,after the projecting is complete, detecting residual liquid on thesubstrate.
 7. The method according to claim 6, further comprising dryingthe substrate in the event that residual liquid is detected.
 8. Themethod according to claim 6, wherein detecting residual liquid isperformed by one or more devices selected from the group comprising acamera, an infrared sensor, and a detector to detect scattered light. 9.The method according to claim 6, wherein projecting the patterned beamof radiation is performed at an exposure station and detecting residualliquid is performed at a measurement station, the measurement stationbeing physically separate from the exposure station.
 10. The methodaccording to claim 6, wherein detecting residual liquid is performed inparallel with projecting the patterned beam.
 11. A lithographicprojection apparatus comprising: a substrate table configured to hold asubstrate; a projection system arranged to project a patterned beam ofradiation onto the substrate; a liquid supply system configured tosupply liquid to a space between the projection system and the substratetable; and a residual liquid detector configured to detect liquidremaining on the substrate when the substrate is held by the substratetable, after an exposure is completed.